Electronic Transport Parameter of Carbon Nanotube MetalSemiconductor OnTube Heterojunction

Sukirno Sukirno, Satria Zulkarnaen Bisri, Irmelia Irmelia


Carbon Nanotubes research is one of the top five hot research topics in physics since 2006 because of its unique properties and functionalities, which leads to widerange applications. One of the most interesting potential applications is in term of nanoelectronic device. Carbon nanotubes heterojunction has been modeled, which was built from two different carbon nanotubes, that one is metallic and the other one is semiconducting. There are two different carbon nanotubes metalsemiconductor heterojunction. The first one is built from CNT(10,10) as metallic carbon nanotube and CNT (17,0) as semiconductor carbon nanotube. The other one is built from CNT (5,5) as metallic carbon nanotube and CNT (8,0). All of the semiconducting carbon nanotubes are assumed to be a pyridinelike Ndoped. Those two heterojunctions are different in term of their structural shape and diameter. It has been calculated their charge distribution and potential profile, which would be useful for the simulation of their electronic transport properties. The calculations are performed by using selfconsistent method to solve NonHomogeneous Poisson’s Equation with aid of Universal Density of States calculation method for Carbon Nanotubes. The calculations are done by varying the doping fraction of the semiconductor carbon nanotubes The electron tunneling transmission coefficient, for low energy region, also has been calculated by using WentzelKramerBrillouin (WKB) approximation. From the calculation results, it is obtained that the charge distribution as well as the potential profile of this device is doping fraction dependent.

Full Text:



Iijima, S., Helical Micritubules of Graphitic Carbon, Nature (London) 354, 5658, 1991.

Ciraci, S., Dag, S., Yildirim, T., Gülseren, O. & Senger, R.T., Functionalized Carbon Nanotubes and Device Applications, J. Phys.: Condens. Matter, 16, R901R960, 2004.

Dresselhaus, M.S., Dresselhaus, G. & Ph. Avouris, Carbon Nanotubes: Synthesis, Structure, Properties and Applications, Springer, 2001.

Jishi, R.A., Dresselhaus, M.S. & Dresselhaus, G., Symmetry Properties of Chiral Carbon Nanotubes, Phys. Rev. B 47 16 671, 1993.

Jishi, R.A., Venkataraman, L., Dresselhaus, M.S. & Dresselhaus, G., Symmetry Properties of Chiral Carbon Nanotubes, Phys. Rev. B 53 11 176, 1995.

Saito, R., Dresselhaus, G. & Dresselhaus, M.S., Tunneling Conductance of Connected Carbon Nanotubes, Phys. Rev. B 53 2044, 1996.

Chico, L., Benedict, L.X., Louie, S.G. & Cohen, M.L., Quantum Conductance of Carbon Nanotubes with Defects, Phys. Rev. B, 54, 4 2600, 1996.

Triozon, F., Lambin, P. & Roche, S., Electronic Transport Properties of Carbon Nanotube based Metal/Semiconductor/Metal Intramolecular Junctions, Nanotechnology, 16, 230233, 2005.

Menon, M. & Srivastava, D., Carbon Nanotube ‘T Junctions’: Nanoscale MetalSemiconductorMetal Contact Devices, Phys. Rev. Lett., 79, 22 4453, 1997.

Sze, S.M., Physics of Semiconductor Devices, 2nd Edition. John Wiley & Sons, 1981.

Kwok K. Ng., Complete Guide to Semiconductor Devices, McGraw Hill, 1995.

Nakanishi, T., Bachtold, A. & Dekker, C., Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode, Phys. Rev. B, 66, 073307, 2002.

Park, N., Kang, D., Hong, S. & Han, S., Pressuredependent Schottky Barrier at the MetalNanotube Contact, Appl. Phys. Lett., 87, 013112, 2005.

....onard, F. & Tersoff, J., Role of FermiLevel Pinning in Nanotube Schottky Diodes, Phys. Rev. Lett., 84, 20 4693, 2000.

Xue, Y. & Ratner, M.A., Schottky Barrier at MetalFinite Semiconducting Carbon Nanotube Interfaces, arXiv:condmat/ 0312546v1, 2003.

Dag, S., Güiseren, O., Ciraci, S. & Yildirim, T., Electronic Structure of the Contact between Carbon Nanotube and Metal Electrodes, Appl. Phys. Lett., 83, 15 3181, 2003.

Tzolov, N., Chang, B., Yin, A., Straus, D. & Xu, J.M., Electronic Transport in a Controllably Grown Carbon NanotubeSilicon Heterojunction Array, Phys. Rev. Lett., 92, 075505, 2004.

Odintsov, A.A., Schottky Barrier in Carbon Nanotube Heterojunction, Phys. Rev. Lett., 85, 1 150, 2000.

Zhang, M., et.al., Strong, Transparent, Multifunctional, Carbon Nanotube Sheets, Science, 309, 1215, 2005.

Jhi, SH., Louie, S.G. & Cohen, M.L., Electronic Properties of Oxidized Carbon Nanotubes, Phys. Rev. Lett., 85, 8 1710, 2000.

Terrones, M., et.al., New Direction in Nanotube Science, Materialstoday October 2004.

Carroll, D.L., et.al., Effects of Nanodomain Formation on the Electronic Structure of Doped Carbon Nanotubes, Phys. Rev. Lett., 81, 11 2332, 1998.

Latil, S., Roche, S., Mayou, D. & Charlier, JC.., Mesoscopic Transport in Chemically Doped Carbon Nanotubes, Phys. Rev. Lett., 92, 256805,

Kaun, CC., Larade, B., Mehrez, H., Taylor, Jeremy & Guo, Hong, CurrentVoltage Characteristics of Carbon Nanotubes with Substitutional Nitrogen, Phys. Rev. B, 65, 205416, 2002.

Czerw, R., et.al., Identification of Electron Donor States in NDoped Carbon Nanotubes, Nano Lett., 1 (9), 457460, 2001.

....onard, F. & Tersoff, J., Novel Length Scales in Nanotube Devices,

Phys. Rev. Lett., 83, 24 5174, 1999.

Saito, R., Dresselhaus, G. & Dresselhaus, M.S., Physical Properties of Carbon Nanotubes, Imperial College Press, 1998.

Dresselhaus, M.S., Solid State Physics, MIT Lecture Notes, Fall 2001.

Galperin, Y.M., Introduction to Modern Solid State Physics, Oslo University Lecture Notes, 2001.

Mintmire, J.W. & White, C.T., Universal Density of States for Carbon Nanotubes, Phys. Rev. Lett., 81, 12 2506, 1998.

Kittel, C., Introduction to Solid State Physics, 7th ed. John Wiley & Sons, 1996.

Nygård, J., Tutorial on Electronic Transport, NT’05 Workshop, Göteborg, 2005.

Dürkop, T., Kim, B.M. & Fuhrer, M.S., Properties and Application of HighMobility Semiconducting Nanotubes, J. Phys.: Condens. Matter, 16, R553R580, 2004.

Zsoldos, I., Kakuk, Gy., R..ti, T. & Szasz, A., Geometric Construction of Carbon Nanotube Junctions”, Modelling Simul. Mater. Sci. Eng., 12, 12511266, 2004.

de Vries, P., A First Course in Computational Physics, John Wiley & Sons, 1994.

Dresselhaus, M.S., Solid State Physics, MIT Lecture Notes, Fall 2001.

Sze, S.M., Physics of Semiconductor Devices, 2nd Edition, John Wiley & Sons, 1981.

McEuen, P., Electronics and Mechanics with Carbon Nanotubes, NT ’05 Conference Presentation, 2005.

DOI: http://dx.doi.org/10.5614%2Fitbj.sci.2009.41.1.2


  • There are currently no refbacks.

View my Stats

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.


ITB Journal Publisher, LPPM ITB, Center for Research and Community Services (CRCS) Building, 6th & 7th Floor, Jalan Ganesha 10, Bandung 40132, Indonesia, Phone: +62-22-86010080, Fax.: +62-22-86010051; E-mail: jmfs@lppm.itb.ac.id