Effect of Chlorine Plasma Treatment on Electronic Properties of GIZO Thin Film Grown on SiO2/Si Substrate

Dahlang Tahir, Suhk Kun Oh, Hee Jae Kang, Sung Heo, Jae Gwan Chung, Jae Cheol Lee


The effect of chlorine plasma treatment on electronic properties of GIZO grown on SiO2/Si by RF magnetron sputtering was investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), and secondary ion mass spectroscopy (SIMS). SIMS depth profiles indicated that the concentration of InO and ZnO on the surface was decreased after Cl2 plasma treatment. REELS data showed that the band gap increased from 3.4 to 3.7 eV. XPS showed that Ind5/2 and Zn2p3/2 shifted to the higher binding energies by 0.5 eV and 0.3 eV, respectively. These phenomena were caused by oxygen deficiency and hydrocarbon contamination reduction as indicated by Cl atom bonding with In and Zn cations that are present on the surface after Cl2 plasma treatment.


bandgap; chlorine; GIZO; REELS; SIMS; XPS.

Full Text:



Kamiya, T. & Hosono, H., Electronic Structures and Device Applications of Transparent Oxide Semiconductor: What is The Real Merit of Semiconductor?, Int. J. Appl. Ceram. Technol., 2(4), pp.285-294, 2005.

Suresh, Wellenius, P., Dhawan, A. & Muth, J., Room Temperature Pulsed Laser Deposited Indium Gallium Zinc Oxide Channel Based Transparent Thin Film Transistors, Appl. Phys. Lett., 90, 123512, 2007.

Lim, W., Douglas, E.A., Kim, S.H., Norton, D.P., Pearton, S.J., Ren, F., Shen, H. & Chang, W.H., High Mobility InGaZnO4 Thin Film Transistors on Paper, Appl. Phys. Lett., 94, 072103, 2009.

Hsieh, T.Y., Chang, T.C., Chen, T.C., Tsai, M.Y., Lu, W.H., Cheng, S.C., Jian, F.Y. & Lin, C.S., Effect of N2O Plasma Treatment on the Improvement of Instability Under Light Illumination for InGaZnO Thin Film Transistors, Thin Solid Films, 520, pp. 1427-1431, 2011.

Park, J.S., Jeong, J.K., Mo, Y.G., Kim, H.D. & Kim, S.I., Improvements in the Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors by Ar Plasma Treatment, Appl. Phys. Lett., 90, 262106, 2007.

Chen, Y.C., Chang, T.C., Wei Li, H., Chen, S.C., Chung, W.F., Chen, Y.H., Tai, Y.H., Tseng, T.Y. & Yeh (Huang), F.S., Surface States Related the Bias Stability of Amorphous In-Ga-Zn-O Thin Film Transistors Under Different Ambient Gasses, Thin Solid Films, 520, pp. 1432-1436, 2011.

Tsai, M.Y., Chang, T.C., Chu, A.K., Chen, T.C., Hsieh, T.Y., Chen, Y.T., Tsai, W.W., Chiang, W.J. & Yan, J.J., Investigation the Degradation Behavior Under Hot Carrier Stress for InGaZnO TFTs with Symmetric and Asymmetric Structures, Thin Solid Films, 528, pp. 57-60, 2013.

Garand, E., Zhou, J., Manolopoulos, D.E., Alexander, M.H. & Neumark, D.M., Nanodiabatic Interactions in the Cl+H2 Reaction Probed by ClH2- and ClD2- Photoelectron Imaging, Science, 319, p. 72, 2008.

Park, H.B., Ju, B., Kang, C.Y., Park, C., Park, C.S., Lee, B.H., Kim, T.W., Kim, B.S. & Choi, R., Performance and Reliability Improvement of HfSiON Gate Dielectrics Using Chlorine Plasma Treatment, Appl. Phys. Lett., 94, p. 042911, 2009.

Chikoidze, E., Nolan, M., Modreanu, M., Sallet, V. & Galtier, P., Effect of Chlorine Doping on Electrical and Optical Properties of znO Thin Films, Thin Solid Films, 516, p. 8146, 2008.

Kamiya, T., Nomura, K., Hirano, M. & Hosono, H., Electronic Structure of Oxygen Deficient Amorphous Oxide Semiconductor a-InGaZnO4-x: Optical Analysis and First-Principle Calculations, Phys. Stat. Sol. (c), 5(9), pp. 3098-3100, 2008.

Leenheer, J., Perkins, J.D., van Hest, M.F.A.M., Berry, J.J., O’Hayre, R.P. & Ginley, D.S., General Mobility Carrier Concentration Relation-ship in Transparent Amorphous Indium Zinc Oxide Films, Phys. Rev. B, 77, p. 115215, 2008.

Tahir, D., Lee, E.K., Tham, T.T., Oh, S.K., Kang, H.J., Hua, J., Heo, S., Park, J.C., Chung, J.G. & Lee, J.C., Band Alignment of Atomic layer Deposited (ZrO2)x(SiO2)1-x Gate Dielectrics on Si (100), Appl. Phys. Lett., 94, p. 212902, 2009.

Tahir, D. & Tougaard, S., Electronic and Optical Properties of Cu, CuO and Cu2O Studied by Electron Spectroscopy, J. Phys.: Condens. Matter, 24, p. 175002, 2012.

Tahir, D. & Tougaard, S., Electronic and Optical Properties of Selected Polymers Studied by Reflection Electron Energy Loss Spectroscopy, J. Appl. Phys., 111, p. 054101, 2012.

Tahir, D., Lee, E.K., Choi, E.H., Oh, S.K., Kang, H.J., Heo, S., Chung, J.G., Lee, J.C. & Tougaard, S., Dielectric and Optical properties of Al2O3/SiO2 Thin Fils Grown on Si Substrates, J. Phys. D: Appl. Phys., 43, p. 255301, 2010.

Tahir, D., Cho, Y.J., Oh, S.K., Kang, H.J., Jin, H., Heo, S., Park, J.G., Lee, J.C. & Tougaard, S., Electronic and Optical Properties of La-aluminates dielectrics Thin Films on Si (100), Surf. Inter. Anal., 42, pp. 1566-1569, 2010.

Huda, M.N., Yan, Y., Wei, S.H. & Al-Jassim, M.M., Electronic Structure of ZnO:GaN Compounds: Asymentric Bandgap Engineering, Phys. Rev., B 78, p. 195204, 2008.

Fuchs, F. & Bechstedt, F., Indium-Oxide Polymorphs from First Principles: Quasiparticle Electronic States, Phys. Rev., B 77, p. 155107, 2008.

Nogales, E., Sanchez, B., Mendez, B. & Piqueras, J., Cathodolumine-scence Study of Isoelectronic Doping of Gallium Oxide Nanowire, Superlatt. and Microstruc., 45, p. 156, 2009.

Moulder, J.F., Stickle, W.F., Sobol, P.E., Bomben, K.D., Chastain, J. & King Jr., R.C., Handbook of X-ray Photoelectron Spectroscopy, Phys. Electronics, Minnesota, 1995.

Na, S.W., Shin, M.H., Chung, Y.M., Han, J.G., Jeung, S.H., Boo, J.H. & Lee, N.E., Etching Characteristics of Zno Thin Films in Chlorine-Containing Inductively Coupled Plasma, Microelect. Engineering, 83, pp. 328-335, 2006.

Lee, D.Y. & Chung, W., Etch Characteristics of Indium Zinc Oxide Thin Films using Inductively Coupled Plasma of a Cl2/Ar Gas, Thin Solid Films, 517, p. 4047, 2009.

Wagner, C.D., Riggs, W.M., Davis, L.E., Moulder, J.F., Muilenberg, G.E., Handbook of X-Ray Photoelectron Spectroscopy; A Reference Book of Standard Data for Use in X-Ray Photoelectron Spectroscopy, Perkin Elmer Corporation, Physical Electronic Division, pp. 86-173, 1979.

Kang, D., Song, L., Kim, C.J., Park, Y.S., Kang, T.D., Lee, H.S., Park, J.W., Baek, S.H., Choi, S.H. & Lee, H.S., Effect of Ga/In Ratio on the Optical and Electrical Properties of GaInZnO Thin Films Grown on SiO2/Si Substrate, Appl. Phys. Lett., 91, 091910, 2007.

DOI: http://dx.doi.org/10.5614%2Fj.math.fund.sci.2013.45.3.1


  • There are currently no refbacks.

View my Stats

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.


ITB Journal Publisher, LPPM ITB, Center for Research and Community Services (CRCS) Building, 6th & 7th Floor, Jalan Ganesha 10, Bandung 40132, Indonesia, Phone: +62-22-86010080, Fax.: +62-22-86010051; E-mail: jmfs@lppm.itb.ac.id