The Influence of Silane Gas Flow Rate on Optoelectronic Properties of c-Si:H Prepared by HWC-VHF-PECVD Technique
DOI:
https://doi.org/10.5614/itbj.sci.2008.40.2.3Abstract
Hydrogenated microcrystalline silicon (c-Si:H) thin films have been deposited using 10% silane (SiH4) in H2 dilution by Hot Wire Cell Very High Frequency Plasma Enhanced Chemical Vapor Deposition (HWC-VHF-PECVD) technique. The resulted thin film characteristics were systematically studied as a function of the deposition parameter. The previous structural studies showed that the structural phase transition from amorphous to microcrystalline thin film was obtained using the filament temperature of 800 C. In this study, the optoelectronic properties of c-Si:H thin films were investigated as a function of the silane gas flow rate from 40 sccm to 80 sccm. The highest deposition rate of 3.6 A/sec and the lower optical bandgap of 1.4 eV were obtained using 80 sccm and 60 sccm of the silane gas flow rate, respectively. The film showed the photosensitivity of 3 x 107, which is quite high above the minimal value of 103 for solar cell application.References
Vallat-Sauvain, E., Kroll, U., Meier, J. & Shah, A., Evolution of the Microstructures in Microcrystalline Silicon Prepared by Very High Frequency Glow Discharge Using Hydrogen Dilution, J. Appl. Phys., 87, 3137, 2000.
Veneri, P.D., Mercaldo, L.V., Bobeico, E., Spinillo, P. & Privato, C., VHF PECVD Microcrystalline Silicon: From Material to Solar Cells, Proc. 19th EU Photovoltaic Solar Energy Conference, Paris-France, 1469, 2004.
Kondo, M., Fukawa, M., Guo, L. & Matsuda, A., High Rate Growth of Microcrystalline Silicon at Low Temperatures, J. Non-Cryst. Solids, 266-269, 84, 2000.
Roschek, T., Repmann, T., Muller, J., Rech, B. & Wagner, H., Comprehensive Study of Microcrystalline Silicon Solar Cells Deposited at High Rate using 13.56 MHz Plasma-Enhanced Chemical Vapor Deposition, J. Vac. Sci. Technol. A, Vac. Surf. Films, 20, 492, 2002.
Ambrosone, G., Coscia, U., Lettieri, S., Maddalena, P., Ambrico, M., Perna, G. & C. Minarini, Microcrystalline Silicon Thin Films Grown at High Deposition Rate by PECVD, Thin Solid Films, 511-512, 280, 2006.
Shah, A., Vallat-Sauvain, E., Torres, P., Meier, J., Kroll, U., Hof, C., Droz, C., Goerlitzer, M., Wyrsch, N. & Vanecek, M., Intrinsic Microcrystalline Silicon (1/4c-Si:H) Deposited by VHF-GD (Very High Frequency-Glow Discharge): A New Material for Photovoltaics and Optoelectronics, Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol., 69-70, 219, 2000.
Vetterl, O., Finger, F., Carius, R., Hapke, P., Houben, L., Kluth, O., Lambertz, A., Mqck, A., Rech, B. & Wagner, H., Intrinsic Microcrystalline Silicon: A New Material for Photovoltaics, Sol. Energy Mater. Sol. Cells, 62, 97, 2000.
Usman, I., Fabrikasi Divais Sel Surya Berbasis -Si:H dengan Teknik VHF-PECVD, Magister Thesis, Institut Teknologi Bandung, 2001.
Rath, J.K., Franken, R.H.J., Gordijn, A., Schropp, R.E.I. & Goedheer, W.J., Growth Mechanism of Microcrystalline Silicon at High Pressure Conditions, J. Non-Cryst. Solids, 338-340, 56, 2004.
Takatsuka, H., Noda, M., Yonekura, Y., Takeuchi, Y. & Yamauchi, Y., Development of High Efficiency Large Area Silicon Thin Film Modules using VHF-PECVD, Solar Energy, 77, 951, 2004.
Syamsu, Malago, J.D., Amiruddin, S., Fitri, S.A., Winata, T. & Barmawi, M., Aplikasi Sistem Hot Wire PECVD Untuk Penumbuhan Lapisan Tipis Silikon Amorf Terhidrogenasi, Kontribusi Fisika Indonesia, 12(3), 2001.
Winata, T., Usman, I., Malago, J.D., Amiruddin, S., Mursal, Sukirno & Barmawi, M., Studi Pengembangan Teknik HWC-VHF-PECVD Untuk Penumbuhan Lapisan Tipis -Si:H, Simposium Fisika Nasional XXI, Makassar-Indonesia, September 2006, 2006.
Malago, J.D., Pengembangan Lapisan Tipis Silikon Amorf dan Paduannya untuk Aplikasi Divais Elektronik dengan Teknik Plasma Enhanced Chemical Vapor Deposition, Ph.D. Dissertation, Institut Teknologi Bandung, 2002.
