Band Alignment and Optical Properties of (ZrO2)0.66(HfO2)0.34 Gate Dielectrics Thin Films on p-Si (100)
Abstract(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO2)0.66(HfO2)0.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO2. In addition, the dielectric function ï¥(k, Ï‰), index of refraction n and the extinction coefficient k for the (ZrO2)0.66(HfO2)0.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-Îµ (k,Ï‰)-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.
http://www.itrs.net/Links/2010ITRS/Home2010.htm, (last accessed July 12, 2010).
E. Bersch, S. Rangan, R.A. Bartynski, E. Garfunkel & E. Vescovo, Band Offsets of Ultrathin High-k Oxide Films with Si, Phys. Rev., B78, 085114, 2008.
J.I. Beltran & M.C. Munos, Ab Initio Study of Decohesion Properties in Oxide/Metal System, Phys. Rev., B78, 245417, 2008.
D. Tahir, H.L. Kwon, H.C. Shin, S.K. Oh, H. J. Kang, S. Heo, J. G. Chung, J. C. Lee, and S. Tougaard, Electronic and Optical Properties of Al2O3/SiO2 Thin Films Grown on Si Substrate, J. of Physics D: Appl. Phys., 43, 255301, 2010.
Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, Structural and Electrical Properties of HfLaOx Films for an Amorphous High-K Gate Insulator, Appl. Phys. Lett., 89, 032903, 2006.
V.V. Afanas'ev and A. Stesmans, Internal Photoemission at Interfaces of High-k Insulator with Semiconductors and Metals, J. Appl. Phys., 102, 081301, 2007.
D.H. Triyoso, R.I. Hedge, J.K. Schaeffer, D. Roan, P.J. Tobin, S.B. Samavedam, B.E. White Jr., R. Gregory & X.D. Wang, Impact of Zr Addition on Properties of Atomic Layer Deposited HfO2, Appl. Phys. Lett., 88, 222901, 2006.
R.I. Hegde, D.H. Triyoso, S.B. Samavedam & B. E. White Jr., Hafnium Zirconate Gate Dielectric for Advance Gate Stack Applications, J. Appl. Phys., 101, 074113, 2007.
J. Robertson, J. Maximizing Performance for Higher K Gate Dielectrics, Appl. Phys., 104, 124111, 2008.
D. Tahir, E. K. Lee, S. K. Oh, T. T. Tham, H. J. Kang, H. Jin, S. Heo, J. C. Park, J. G. Chung & J. C. Lee, Band Alignment of Atomic Layer Deposited (ZrO2)x(SiO2)1-x Gate Dielectrics on Si (100), Appl. Phys. Lett., 94, 212902, 2009.
http://www.webelements.com/electronegativity.html, (last accessed July 5, 2010).
H. Jin, S.K. Oh, H.J. Kang & M.-H. Cho, Band Gap and Band Offsets for Ultrathin (HfO2)x(SiO2)1-x Dielectrics on Si (100), Appl. Phys. Lett., 89, 122901, 2006.
S. Miyazaki, Characterization of High-k Gate Dielectric/Silicon Interfaces, Appl. Surf. Science, 190, 66-74, 2002.
S. Miyazaki, M. Narasaki, M. Ogasawara, M. Hirose, Chemical and Electronic Structure of Ultrathin Zirconium Oxide Films on Silicon as Determined by Photoelectron Spectroscopy, Solid State Elect., 16, 1679-1685, 2002.
S. Miyazaki, M. Narasaki, A. Suyama, M. Yamaoka & H. Murakami, Electronic Structure and Energy Band Offsets for Ultrathin Silicon Nitride on Si(100), Appl. Surf. Science, 216, 252-257, 2003.
H. Jin, S. K. Oh, H. J. Kang, and S. Tougaard, Electronic properties of ultrathin (HfO2)x(SiO2)1-x dielectrics on Si (100), J. Appl. Phys., 102, 053709, 2007.
S. Tougaard, F. Yubero, QUEELS-µ(k, Ï)-REELS: Software Package for Quantitative Analysis of Electron Energy Loss Spectra; Dielectric Function Determined by Reflection Electron Energy Loss Spectroscopy, Ver. 3.0, 2008. See http://www.quases.com.
S. Hajati, O. Romanyuk, J. Zemek & S. Tougaard, Validity of Yubero-Tougaard Theory to Quantitatively Determine the Dielectric Properties of Surface Nanofilms, Phys. Rev., B77, 155403, 2008.
F. Wooten, Optical Properties of Solid, Academic Press New York and London, pp. 42-185,1972.
L. K. Dash, N. Vast, P. Baranek, M. C. Cheynet, and L. Reining, Electronic Structure and Electron Energy Loss Spectroscopy of ZrO2 Zirconia, Phys. Rev., B70, 245116, 2004.
D. Tahir, E. K. Lee, S. K. Oh, H. J. Kang, S. Heo, J. G. Chung, J. C. Lee & S. Tougaard, Dielectric and Optical Properties Zr-Silicates Thin Films Grown on Si (100)by atomic layer deposition, J. Appl. Phys., 106, 084108, 2009.
D. Tahir, E. K. Lee, H. L. Kwon, S. K. Oh, H. J. Kang, S. Heo, E. H. Lee, J. G. Chung, J. C. Lee & S. Tougaard, Electronic and Optical Properties of GIZO Thin Film Grown on SiO2/Si Substrate, Surf. and Interf. Anal., 42, 906-910, 2010.