A Study of Quantum dots of GaSb

M. Barmawi; Sugianto Sugianto; R.A. Sani; Euis Sustini; P. Arifin; M. Budiman

Authors

M. Barmawi Laboratory Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganecha 10 Bandung 40132
Sugianto Sugianto Laboratory Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganecha 10 Bandung 40132
R.A. Sani Laboratory Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganecha 10 Bandung 40132
Euis Sustini Laboratory Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganecha 10 Bandung 40132
P. Arifin Laboratory Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganecha 10 Bandung 40132
M. Budiman Laboratory Electronic Material Physics, Department of Physics, Bandung Institute of Technology, Jl. Ganecha 10 Bandung 40132

Keywords:

MOCVD, GaSb, Quantum dot, titik quantum

Abstract

Abstract. Quantum Dots is a nano structured materials, which is an interesting object for fundamental study as well as for applications. Quantum Dots has been used for optoelectronic devices, such as fast detectors and for lasers. In this paper we report preliminary results of the preparation of quantum dots of GaSb in our laboratory. These dots are prepared by self-organized growth by MOCVD, using Trymethylgalium and Tridismethylaminoantimonat as metal organic sources and using GaAs as substrate. The results are studied by Scanning Electron Microscope. We propose further characterization of these quantum dots.

Studi Mengenai Titik Kuantum GaSb

Sari. Quantum Dot adalah material yang mempunyai struktur nano, yang merupakan objek untuk penelitian fundamental maupun untuk penerapannya. Dalam makalah ini dilaporakan hasil-hasil yang pertama yang kita peroleh dalam pembuatan Quantum Dot dari GaSb dalam laboratorium kami. Quantum Dot ini telah ditumbuhkan dengan menggunakan penumbuhan yang "selforganized" dengan reactor MOCVD dengan mempergunakan Trimetilgalium dan Trisdismetilantimonat sebagai sumber-sumber metalorganic dan GaAs digunakan sebagai substrat. Hasilnya ditelaah dengan menggunakan SEM. Telat disarankan karakterisasi lanjutan yang harus dilakukan.

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