Vol. 33 No. 1 (2001)
Published:
2019-01-18
Articles
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Epitaxy of GaN Film by Hydrogen Plasma Assisted MOCVD
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MOCVD Growth of GaSb and Al GaSb
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152 times
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A Study of Quantum dots of GaSb
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239 times
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Simulation and Fabrication of Double Barrier Structure of P-I-N Amorphous Silicon (a-Si) Device
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168 times
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Effect of B-doping on the Crystal Structural and Optical Properties of Zinc Oxide Thin Films for Photonic Devices
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197 times
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Effect of Annealing Treatment on the Optical Properties of Zinc Oxide (ZnO) thin film prepared by MOCVD
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Effects of Substrate Temperature on Vacuum Deposited Thin Film of Disperse Red 1 on ITO Glass
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